FDS9933
Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
Key Features
- -5 A, -20 V, RDS(ON) = 55 mΩ @ VGS = -4.5 V RDS(ON) = 90 mΩ @ VGS = -2.5 V
- Extended VGSS range (±12V) for battery applications
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
