Datasheet Details
| Part number | FDS9958 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 339.23 KB |
| Description | Dual P-Channel MOSFET |
| Download | FDS9958 Download (PDF) |
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| Part number | FDS9958 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 339.23 KB |
| Description | Dual P-Channel MOSFET |
| Download | FDS9958 Download (PDF) |
|
|
|
These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.
Applications Load Switch Power Management D2 D2 D1 D1 G2 S2 G1 Pin 1 SO-8 S1 D1 8 D2 D2 D1 5 6 7 Q1 Q2 4 3 2 1 G2 S2 G1 S1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Dual Operation Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 3) (Note 1a) Ratings -60 ±20 -2.9 -12 54 2 1.6 0.9 -55 to +150 °C W Units V V A mJ Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 40 78 °C/W Package Marking and Ordering Information Device Marking FDS9958 Device FDS9958 Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500units ©2007 Fairchild Semiconductor Corporation FDS9958 Rev.C 1 www.fairchildsemi.com Free Datasheet http://www.datasheet4u.com/ FDS9958 Dual P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -
FDS9958 Dual P-Channel PowerTrench® MOSFET July 2007 FDS9958 Dual P-Channel PowerTrench MOSFET -60V, -2.
| Part Number | Description |
|---|---|
| FDS9958_F085 | Dual P-Channel PowerTrench MOSFET |
| FDS9953A | Dual 30V P-Channel PowerTrench MOSFET |
| FDS9926A | Dual N-Channel MOSFET |
| FDS9933 | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| FDS9933A | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| FDS9933BZ | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| FDS9934C | MOSFET |
| FDS9936A | Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS9945 | 60V N-Channel PowerTrench MOSFET |
| FDS9400A | 30V P-Channel PowerTrench MOSFET |