rDS(ON) = 15mΩ, VGS = 10V, ID = 35A rDS(ON) = 18.5mΩ, VGS = 4.5V, ID = 35A High performance trench technology for extremely low General Description This N-Channel MOSFET.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching s.

FDU8870

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