dual n-channel specified powertrench mosfet.
* 600 mA, 20 V RDS(ON) = 700 mΩ @ VGS = 4.5 V RDS(ON) = 850 mΩ @ VGS = 2.5 V
* ESD protection diode (note 3)
* RoHS Compliant
Applications
* Li-Ion Batte.
* Li-Ion Battery Pack
6 5 4 1 2 3
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG
TA=25 C unless otherwise.
This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v.
Features
* 600 mA, 20 V RDS(ON) = 700 mΩ @ VGS = 4.5 V RDS(ON) = 850 mΩ @ VGS = 2.5 V
* ESD prot.
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