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FDY3001NZ - Dual N-Channel Specified PowerTrench MOSFET

Description

This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v.

Features

  • 200 mA, 20 V RDS(ON) = 5 Ω @ VGS = 4.5 V RDS(ON) = 7 Ω @ VGS = 2.5 V.
  • ESD protection diode (note 3).
  • RoHS Compliant.

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www.DataSheet4U.com FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET January 2006 FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. Features • 200 mA, 20 V RDS(ON) = 5 Ω @ VGS = 4.5 V RDS(ON) = 7 Ω @ VGS = 2.
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