Datasheet4U Logo Datasheet4U.com

FDY301NZ - Single N-Channel MOSFET

Features

  • This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. IGN.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDY1002PZ Dual P-Channel MOSFET ON Semiconductor
FDY4000CZ N- & P-Channel 20V MOSFET VBsemi

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDY3000NZ Dual N-Channel Specified PowerTrench MOSFET
FDY3001NZ Dual N-Channel Specified PowerTrench MOSFET
FDY300NZ Single N-Channel Specified PowerTrench MOSFET
FDY302NZ Single N-Channel 2.5V Specified PowerTrench MOSFET
FDY1002PZ MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDY301NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET June 2024 FDY301NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. IGN Applications ES • Li-Ion Battery Pack • 200 mA, 20 V RDS(ON) = 5 Ω @ VGS = 4.5 V RDS(ON) = 7 Ω @ VGS = 2.
Published: |