FDY301NZ Datasheet, Fairchild Semiconductor

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. IGN Applications ES

ES
* Li-Ion Battery Pack
* 200 mA, 20 V RDS(ON) = 5 Ω @ VGS = 4.5 V RDS(ON) = 7 Ω @ VGS = 2.5 V
* ESD prote.