Datasheet4U Logo Datasheet4U.com

FDZ191P - P-Channel 1.5V PowerTrench WL-CSP MOSFET

Description

Max rDS(on) = 85mΩ at VGS = -4.5V, ID = -1A Max rDS(on) = 123mΩ at VGS = -2.5V, ID = -1A Max rDS(on) = 200mΩ at VGS = -1.5V, ID = -1A Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Ultra-thin package: less than 0.65 mm heigh

Features

  • General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDZ1905PZ P-Channel MOSFET ON Semiconductor
FDZ5013 Frequency Doubler Tyco
FDZ5013 Frequency Doubler MA-COM
FDZ5013C Frequency Doubler Tyco
FDZ5013C Frequency Doubler MA-COM

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDZ1905PZ P-Channel MOSFET
FDZ192NZ N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET
FDZ193P P-Channel 1.7V PowerTrench WL-CSP MOSFET
FDZ197PZ -20V P-Channel 1.5V Specified PowerTrench Thin WL-CSP MOSFET
FDZ1040L Integrated Load Switch

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET October 2006 FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET -20V, -1A, 85mΩ Features General Description „ Max rDS(on) = 85mΩ at VGS = -4.5V, ID = -1A „ Max rDS(on) = 123mΩ at VGS = -2.5V, ID = -1A „ Max rDS(on) = 200mΩ at VGS = -1.5V, ID = -1A „ Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA „ Ultra-thin package: less than 0.65 mm height when mounted to PCB „ RoHS Compliant tm Designed on Fairchild's advanced 1.5V PowerTrench process with state of the art "low pitch" WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on).
Published: |