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FDZ197PZ - -20V P-Channel 1.5V Specified PowerTrench Thin WL-CSP MOSFET

Description

Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ197PZ minimizes both PCB space and rDS(on).

Features

  • Max rDS(on) = 64 mΩ at VGS = -4.5 V, ID = -2.0 A.
  • Max rDS(on) = 71 mΩ at VGS = -2.5 V, ID = -2.0 A.
  • Max rDS(on) = 79 mΩ at VGS = -1.8 V, ID = -1.0 A.
  • Max rDS(on) = 95 mΩ at VGS = -1.5 V, ID = -1.0 A.
  • Occupies only 1.5 mm2 of PCB area. Less than 50% of the area of 2 x 2 BGA.
  • Ultra-thin package: less than 0.65 mm height when mounted to PCB.
  • HBM ESD protection level > 4400V (Note3).
  • RoHS Compliant General.

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FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET www.DataSheet4U.com June 2009 FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20 V, -3.8 A, 64 mΩ Features „ Max rDS(on) = 64 mΩ at VGS = -4.5 V, ID = -2.0 A „ Max rDS(on) = 71 mΩ at VGS = -2.5 V, ID = -2.0 A „ Max rDS(on) = 79 mΩ at VGS = -1.8 V, ID = -1.0 A „ Max rDS(on) = 95 mΩ at VGS = -1.5 V, ID = -1.0 A „ Occupies only 1.5 mm2 of PCB area.Less than 50% of the area of 2 x 2 BGA „ Ultra-thin package: less than 0.65 mm height when mounted to PCB „ HBM ESD protection level > 4400V (Note3) „ RoHS Compliant General Description Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ197PZ minimizes both PCB space and rDS(on).
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