Download FDZ293P Datasheet PDF
FDZ293P datasheet preview
FDZ293P page 2
Page 2
FDZ293P page 3
Page 3

FDZ293P Key Features

  • 4.6 A, -20 V rDS(on) = 46 mΩ @ VGS = -4.5 V rDS(on) = 72 mΩ @ VGS = -2.5 V
  • Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6
  • Ultra-thin package: less than 0.85 mm height when mounted to PCB
  • Outstanding thermal transfer characteristics: 4 times better than SSOT-6
  • Ultra-low Qg x rDS(on) figure-of-merit
  • High power and current handling capability

Related Fairchild Datasheets

Part Number Description
FDZ291P P-Channel 1.5 V Specified PowerTrench BGA MOSFET
FDZ294N N-Channel 2.5 V Specified PowerTrench BGA MOSFET
FDZ298N N-Channel 2.5 V Specified PowerTrench BGA MOSFET
FDZ299P P-Channel 2.5 V Specified PowerTrench BGA MOSFET
FDZ201N N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET

FDZ293P Description

bining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ293P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low rDS(on).