FDZ293P datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

*
  –4.6 A,
  –20 V rDS(on) = 46 mΩ @ VGS =
  –4.5 V rDS(on) = 72 mΩ @ VGS =
  –2.5 V
* Occupies only 2.2.

Application

* Battery management
* Load switch
* Battery protection G AT E G D Bottom Top TA=25oC unless otherwise .

Description

Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ293P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combi.

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