FDZ299P Overview
bining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ299P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).
FDZ299P Key Features
- 4.6 A, -20 V RDS(ON) = 55 mΩ @ VGS = -4.5 V RDS(ON) = 80 mΩ @ VGS = -2.5 V
- Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6
- Ultra-thin package: less than 0.80 mm height when mounted to PCB
- Outstanding thermal transfer characteristics: 4 times better than SSOT-6
- Ultra-low Qg x RDS(ON) figure-of-merit
- High power and current handling capability