Fairchild Semiconductor FDZ293P
the FDZ293P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low rDS(on).| Part No. | FDZ293P |
|---|---|
| Datasheet | FDZ293P Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | P-Channel 2.5 V Specified PowerTrench BGA MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ293P minimizes both PCB space and rDS(on).FEATURES
● –4.6 A, –20 V rDS(on) = 46 mΩ @ VGS = –4.5 V rDS(on) = 72 mΩ @ VGS = –2.5 V● Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6
● Ultra-thin package: less than 0.85 mm height when mounted to PCB
● Outstanding thermal transfer characteristics: 4 times better than SSOT-6
● Ultra-low Qg x rDS(on) figure-of-merit
● High power and current handling capability. S
APPLICATIONS
● Battery management● Load switch
● Battery protection G AT E G D Bottom Top TA=25oC unless otherwise noted
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings –20 ±12 (Note 1a) Units V V A W °C –4.6 –10 1.7 –55 to +150 Power Dissipation for Single Operation (Note 1a) Operating and Storage Junction Temperature Range The...
