FDZ298N
FDZ298N is N-Channel 2.5 V Specified PowerTrench BGA MOSFET manufactured by Fairchild Semiconductor.
Description bining Fairchild’s advanced 2.5V specified Power Trench process with state of the art BGA packaging, the FDZ298N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).
Features
- 6 A, 20 V RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V
- Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6
- Ultra-thin package: less than 0.80 mm height when mounted to PCB
- Outstanding thermal transfer characteristics: 4 times better than SSOT-6
- Ultra-low Qg x RDS(ON) figure-of-merit
- High power and current handling capability.
Applications
- Battery management
- Battery protection
P in 1
Bottom
Top
TA=25o C unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
Parameter
Ratings
20 ±12
(Note 1a)
Units
V V A W °C
6 10 1.7
- 55 to +150
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
°C/W
Package Marking and Ordering...
