FDZ294N Overview
bining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ294N minimizes both PCB space This BGA MOSFET embodies a and RDS(ON). breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).
FDZ294N Key Features
- 6 A, 20 V RDS(ON) = 23 mΩ @ VGS = 4.5 V RDS(ON) = 34 mΩ @ VGS = 2.5 V
- Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6
- Ultra-thin package: less than 0.85mm height when mounted to PCB
- Outstanding thermal transfer characteristics: 4 times better than SSOT-6
- Ultra-low Qg x RDS(ON) figure-of-merit
- High power and current handling capability