FGH50N3 igbt equivalent, n-channel igbt.
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o.
operating at high frequencies where low conduction losses are essential. This device has been optimized for medium frequ.
The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lo.
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