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FGPF4533 - PDP IGBT

General Description

Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

Applications • PDP System GC E TO-220F (Retractable) Absolute Maximum Ratings Symbol VCES VGES IC pulse(1)* PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.

for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 25oC @ TC = 100 C o Ratings 330 ± 30 200 28.4 11.4 -55 to +150 -55 to +150 300 Units V V A W W o o o C C C Thermal Characteristics Symbol RθJC(IGBT) RθJA Notes: (1) Half Sine Wave, D < 0.01, pluse width < 5μsec * Ic_pluse limited by max Tj Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ.

Overview

FGPF4533 330V, PDP Trench IGBT August 2010 FGPF4533 330V, PDP.

Key Features

  • High current capability.
  • Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 A.
  • High input impedance.
  • Fast switching.
  • RoHS compliant General.