FQA11N90 - 900V N-Channel MOSFET

Fairchild (now onsemi)

Datasheet Details

Part number	FQA11N90
Manufacturer	Fairchild (now onsemi)
File Size	1.33 MB
Description	900V N-Channel MOSFET
Datasheet	FQA11N90 Datasheet

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Overview

FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.

Key Features

11.4 A, 900 V, RDS(on) = 960 mΩ (Max. ) @ VGS = 10 V, ID = 5.7 A.
Low Gate Charge (Typ. 72 nC).
Low Crss (Typ. 30 pF).
100% Avalanche Tested.
RoHS Compliant.

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