FQA11N90
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
Key Features
- 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A
- Low Gate Charge (Typ. 72 nC)
- Low Crss (Typ. 30 pF)
- 100% Avalanche Tested
