FQA13N50CF Description
15 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A Low Gate Charge (Typ. 20 pF) 100% Avalanche Tested Fast Recovery Body Diode (Typ. 100 ns) This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
FQA13N50CF Key Features
- 15 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A
- Low Gate Charge (Typ. 43 nC)
- Low Crss (Typ. 20 pF)
- 100% Avalanche Tested
- Fast Recovery Body Diode (Typ. 100 ns)