FQA160N08 mosfet equivalent, 80v n-channel mosfet.
This N-Channel enhancement mode power MOSFET is
* 160 A, 80 V, RDS(on) = 7 mΩ (Max.) @ VGS = 10 V,
produced using Fairchild Semiconductor’s proprietary planar strip.
* 17
D
G D S
TO-3PN
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS I.
Features
This N-Channel enhancement mode power MOSFET is
* 160 A, 80 V, RDS(on) = 7 mΩ (Max.) @ VGS = 10 V,
produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET
ID = 80 A
technology has.
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