FQAF11N90 Datasheet - Fairchild Semiconductor

900V N-Channel MOSFET

FQAF11N90 Features

* 7.2A, 900V, RDS(on) = 0.96 Ω @ VGS = 10 V Low gate charge ( typical 72 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Rating

FQAF11N90 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQAF11N90 Datasheet (663.85 KB)

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Datasheet Details

Part number:

FQAF11N90

Manufacturer:

Fairchild Semiconductor

File Size:

663.85 KB

Description:

900v n-channel mosfet.

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FQAF11N90 900V N-Channel MOSFET Fairchild Semiconductor

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FQAF11N90 Features

FQAF11N90 General Description

Datasheet Details

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