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FQAF13N80 Datasheet - Fairchild Semiconductor

800V N-Channel MOSFET

FQAF13N80 Features

* 8.0A, 800V, RDS(on) = 0.75Ω @VGS = 10 V Low gate charge ( typical 68 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Ratings

FQAF13N80 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQAF13N80 Datasheet (716.16 KB)

Preview of FQAF13N80 PDF

Datasheet Details

Part number:

FQAF13N80

Manufacturer:

Fairchild Semiconductor

File Size:

716.16 KB

Description:

800v n-channel mosfet.

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FQAF13N80 800V N-Channel MOSFET Fairchild Semiconductor

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