FQAF13N80 mosfet equivalent, 800v n-channel mosfet.
*
*
*
*
*
* 8.0A, 800V, RDS(on) = 0.75Ω @VGS = 10 V Low gate charge ( typical 68 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche teste.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
Image gallery
TAGS
Download (Size : 716.16KB)