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FQAF34N25 Datasheet - Fairchild Semiconductor

250V N-Channel MOSFET

FQAF34N25 Features

* 21.7A, 250V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

* ◀ ▲

* G! G D S TO-3PF FQAF Series ! S Absolute M

FQAF34N25 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

FQAF34N25 Datasheet (686.04 KB)

Preview of FQAF34N25 PDF

Datasheet Details

Part number:

FQAF34N25

Manufacturer:

Fairchild Semiconductor

File Size:

686.04 KB

Description:

250v n-channel mosfet.

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FQAF34N25 250V N-Channel MOSFET Fairchild Semiconductor

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