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* 21.7A, 250V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tes.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per.

FQAF34N20

FQAF34N20L

FQAF33N10

FQAF33N10L

FQAF10N80

FQAF11N40

FQAF11N90

FQAF11N90C

FQAF12N60

FQAF12P20

FQAF13N50

FQAF13N80

FQAF14N30