FQAF33N10 Datasheet, MOSFET, Fairchild Semiconductor

Download (Size : 571.55KB)

FQAF33N10 Features and benefits

*
*
*
*
*
*
* 25.8A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching 100% avalanc.

FQAF33N10 Application

such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. TM Features
*
*

FQAF33N10 Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

Image gallery