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FQAF8N80 Datasheet - Fairchild Semiconductor

800V N-Channel MOSFET

FQAF8N80 Features

* 5.9A, 800V, RDS(on) = 1.2Ω @VGS = 10 V

* Low gate charge ( typical 44 nC)

* Low Crss ( typical 20 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability G DS TO-3PF FQAF Series G! D !

* ◀▲

* ! S Absolute Maximum R

FQAF8N80 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQAF8N80 Datasheet (690.58 KB)

Preview of FQAF8N80 PDF

Datasheet Details

Part number:

FQAF8N80

Manufacturer:

Fairchild Semiconductor

File Size:

690.58 KB

Description:

800v n-channel mosfet.

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FQAF8N80 800V N-Channel MOSFET Fairchild Semiconductor

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