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* 56A, 80V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 84 nC) Low Crss ( typical 200 pF) Fast switching 100% avalanche.

such as automotive, high efficiency switching for DC/DC converters, and DC motor control. TM Features
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQAF9N50

FQAF9N90

FQAF9P25

FQAF10N80

FQAF11N40

FQAF11N90

FQAF11N90C

FQAF12N60

FQAF12P20

FQAF13N50

FQAF13N80

FQAF14N30

FQAF15N70