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* -7.1A, -250V, RDS(on) = 0.62Ω @VGS = -10 V Low gate charge ( typical 29 nC) Low Crss ( typical 27 pF) Fast switching 100% avalanche te.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

FQAF90N08

FQAF9N50

FQAF9N90

FQAF10N80

FQAF11N40

FQAF11N90

FQAF11N90C

FQAF12N60

FQAF12P20

FQAF13N50

FQAF13N80

FQAF14N30

FQAF15N70