200v n-channel mosfet.
* 19.4 A, 200 V, RDS(on) = 150 mΩ (Max.) @ VGS = 10 V, ID = 9.7 A
* Low Gate Charge (Typ. 31 nC)
* Low Crss (Typ. 30 pF)
* 100% Avalanche Tested
* RoH.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
Image gallery
TAGS
Download (Size : 865.86KB)