*
*
*
*
*
*
*
* 16.5A, 80V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 8.8 nC) Low Crss ( typical 29 pF) Fast switching 100% ava.

such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D TM Features
*
*

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

FQI17N08

FQI17P06

FQI17P10

FQI10N20

FQI10N20C

FQI10N20L

FQI10N60C

FQI11N40

FQI11N40C

FQI11P06

FQI12N20L

FQI12N50

FQI12N60