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*
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* -2.0A, -400V, RDS(on) = 6.5Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche te.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

FQI2P25

FQI20N06

FQI20N06L

FQI22P10

FQI24N08

FQI27N25

FQI27N25TU-F085

FQI27N25TU_F085

FQI27P06

FQI28N15

FQI2N30

FQI2N50

FQI2N60