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FQI3P50 Fairchild Semiconductor 500V P-Channel MOSFET

Title P채널 500V 2.7A(Tc) 3.13W(Ta), 85W(Tc) 스루홀 I2PAK(TO-262)
Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast base...
Features





• -2.7A, -500V, RDS(on) = 4.9Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S !

● G! G S ▶ ▲
● D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwi...

Datasheet PDF File FQI3P50 Datasheet - 645.59KB
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DigiKey
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FQI3P50 Distributor

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DigiKey
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onsemi

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