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* 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQI5N15

FQI5N20

FQI5N20L

FQI5N30

FQI5N40

FQI5N50

FQI5N50C

FQI5N60

FQI5N60C

FQI5N90

FQI50N06

FQI50N06L

FQI55N06