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* -4.8A, -200V, RDS(on) = 1.4Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested D.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQI5P10

FQI50N06

FQI50N06L

FQI55N06

FQI55N10

FQI58N08

FQI5N15

FQI5N20

FQI5N20L

FQI5N30

FQI5N40

FQI5N50

FQI5N50C