FQI7P06 datasheet, mosfet equivalent, Fairchild Semiconductor

datasheet Download (Size : 662.27KB)

FQI7P06 Features and benefits

*
*
*
*
*
*
* -7A, -60V, RDS(on) = 0.41Ω @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanch.

FQI7P06 Application

such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operate.

FQI7P06 Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

Image gallery