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* 10A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 13 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche .

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

FQP10N20

FQP10N20C

FQP10N50CF

FQP10N60

FQP10N60C

FQP10N60CF

FQP10N65

FQP11N40

FQP11N40C

FQP11N50CF

FQP11P06

FQP12N20

FQP12N20L