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Fairchild Semiconductor Electronic Components Datasheet

FQP10N20L Datasheet

200V LOGIC N-Channel MOSFET

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FQP10N20L
200V LOGIC N-Channel MOSFET
December 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switching DC/DC converters,
switch mode power supplies, and motor control.
Features
• 10A, 200V, RDS(on) = 0.36@VGS = 10 V
• Low gate charge ( typical 13 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
operation from logic drivers
GD S
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FQP10N20L
200
10
6.3
40
± 20
180
10
8.7
5.5
87
0.7
-55 to +150
300
Typ Max
-- 1.44
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A2, December 2000


Fairchild Semiconductor Electronic Components Datasheet

FQP10N20L Datasheet

200V LOGIC N-Channel MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
200 --
ID = 250 µA, Referenced to 25°C -- 0.18
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
-- --
-- --
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
1.0 --
VGS = 10 V, ID = 5.0 A
VGS = 5 V, ID = 5.0 A
(Note 4)
--
0.29
0.3
VDS = 30 V, ID = 5.0 A
-- 10.7
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 640
-- 95
-- 14
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 100 V, ID = 10 A,
RG = 25
(Note 4, 5)
VDS = 160 V, ID = 10 A,
VGS = 5 V
(Note 4, 5)
--
--
--
--
--
--
--
13
150
50
95
13
2.4
6.1
--
--
1
10
100
-100
2.0
0.36
0.38
--
830
125
18
35
310
110
200
17
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 10
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 40
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 10 A,
dIF / dt = 100 A/µs
(Note 4) -- 120
-- 0.57
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.7mH, IAS = 10A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 10A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2000 Fairchild Semiconductor International
Rev. A2, December 2000


Part Number FQP10N20L
Description 200V LOGIC N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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