FQP20N06L datasheet, mosfet equivalent, Fairchild Semiconductor

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FQP20N06L Features and benefits

* 21 A, 60 V, RDS(on) = 55 mΩ (Max.) @ VGS = 10 V, ID = 10.5 A
* Low Gate Charge (Typ. 9.5 nC)
* Low Crss (Typ. 35 pF)
* 100% Avalanche Tested
* 175°C.

FQP20N06L Application

November 2013 Features
* 21 A, 60 V, RDS(on) = 55 mΩ (Max.) @ VGS = 10 V, ID = 10.5 A
* Low Gate Charge (Typ. .

FQP20N06L Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.

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