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* 20A, 60V, RDS(on) = 0.06Ω @VGS = 10 V Low gate charge ( typical 11.5 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche.

such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operat.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQP20N06L

FQP20N60

FQP22N30

FQP22N50

FQP22P10

FQP24N08

FQP27N25

FQP27P06

FQP28N15

FQP2N30

FQP2N40

FQP2N50

FQP2N60