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* 6.0A, 300V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 17 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche teste.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQPF9N08

FQPF9N08L

FQPF9N15

FQPF9N25

FQPF9N25C

FQPF9N25CT

FQPF9N50

FQPF9N50C

FQPF9N50CF

FQPF9N90C

FQPF9N90CT

FQPF90N08

FQPF90N10V2