FQPF9N50C datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A
* Low Gate Charge (Typ. 28 nC)
* Low Crss (Typ. 24 pF)
* 100% Avalanche Tested D GDS G .

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switchi.

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