FQT3P20 mosfet equivalent, 200v p-channel mosfet.
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* -0.67A, -200V, RDS(on) = 2.7Ω @VGS = 10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 7.5 pF) Fast switching Improved dv/dt capabil.
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
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