500v n-channel mosfet.
* 2.6 A, 500 V, RDS(on)=2.7 Ω(Max.)@VGS=10 V, ID=1.3 A
* Low Gate Charge (Typ. 10 nC)
* Low Crss (Typ. 6.0 pF)
* 100% Avalanche Tested
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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superi.
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