of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o.

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss .

HGTP7N60C3

HGTP7N60A4

HGTP7N60A4D

HGTP7N60B3

HGTP7N60B3D

HGTP10N120BN

HGTP10N40C1

HGTP10N40C1D

HGTP10N40E1

HGTP10N40E1D

HGTP10N40F1D

HGTP10N50C1

HGTP10N50C1D