* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
HGTP7N60C3 Datasheet (180.91 KB)
HGTP7N60C3
Fairchild Semiconductor
180.91 KB
N-channel igbt.
Data Sheet
HGTD7N60C3S, HGTP7N60C3
December 2001
14A, 600V, UFS Series N-Channel IGBTs
The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage swi.
📁 Related Datasheet
HGTP7N60C3 N-Channel IGBT (Intersil Corporation)
HGTP7N60C3 UFS Series N-Channel IGBT (HARRIS)
HGTP7N60C3D N-Channel IGBT (Fairchild Semiconductor)
HGTP7N60C3D N-Channel IGBT (Intersil Corporation)
HGTP7N60C3D UFS Series N-Channel IGBT (HARRIS)
HGTP7N60A4 N-Channel IGBT (Fairchild Semiconductor)
HGTP7N60A4 N-Channel IGBT (Intersil Corporation)
HGTP7N60A4 N-Channel IGBT (ON Semiconductor)
HGTP7N60A4D N-Channel IGBT (Fairchild Semiconductor)
HGTP7N60A4D N-Channel IGBT (Intersil Corporation)
