HGTP10N40F1D Datasheet, Igbt, Intersil Corporation

✔ HGTP10N40F1D Features

10A, 400V and 500V
Latch Free Operation
Typical Fall Time < 1.4µs
High Input Impedance
Low Conduction Loss
Anti-Parallel Diode
tRR < 60ns Description The I

✔ HGTP10N40F1D Application

operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power

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HGTP10N40F1D

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Intersil Corporation

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📄 Datasheet

Description:

N-channel igbt. The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has

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Rochester Electronics LLC

IGBT 400V 12A TO-220

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HGTP10N40F1D

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HGTP10N40F1D N-Channel IGBT Intersil Corporation