* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is the development type TA49335. The diode used
HGTP12N60A4D Datasheet (173.18 KB)
HGTP12N60A4D
Fairchild Semiconductor
173.18 KB
N-channel igbt.
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Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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Description
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