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HGTP12N60B3 Datasheet - Intersil Corporation

HGTP12N60B3 - N-Channel IGBT

HGTP12N60B3 Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications

HGTP12N60B3_IntersilCorporation.pdf

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Datasheet Details

Part number:

HGTP12N60B3

Manufacturer:

Intersil Corporation

File Size:

112.92 KB

Description:

N-channel igbt.

HGTP12N60B3 Distributor

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