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HGTP12N60B3D Datasheet - Fairchild Semiconductor

HGTP12N60B3D - N-Channel IGBT

HGTP12N60B3D Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49171. The diode used

HGTP12N60B3D_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

HGTP12N60B3D

Manufacturer:

Fairchild Semiconductor

File Size:

205.73 KB

Description:

N-channel igbt.

HGTP12N60B3D Distributor

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HGTP12N60B3D N-Channel IGBT Fairchild Semiconductor