* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in a
HGTP12N60C3D Datasheet (154.93 KB)
HGTP12N60C3D
Fairchild Semiconductor
154.93 KB
N-channel igbt.
HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gat.
📁 Related Datasheet
HGTP12N60C3 N-Channel IGBT (Fairchild Semiconductor)
HGTP12N60C3 N-Channel IGBT (Intersil Corporation)
HGTP12N60C3D N-Channel IGBT (Intersil Corporation)
HGTP12N60A4 N-Channel IGBT (Fairchild Semiconductor)
HGTP12N60A4 N-Channel IGBT (Intersil Corporation)
HGTP12N60A4D N-Channel IGBT (Fairchild Semiconductor)
HGTP12N60A4D N-Channel IGBT (Intersil Corporation)
HGTP12N60A4D N-Channel IGBT (ON Semiconductor)
HGTP12N60B3 N-Channel IGBT (Intersil Corporation)
HGTP12N60B3D N-Channel IGBT (Fairchild Semiconductor)
