* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in a
HGTP12N60C3D Datasheet (154.93 KB)
HGTP12N60C3D
Fairchild Semiconductor
154.93 KB
N-channel igbt.
HGTP12N60C3D, HGT1S12N60C3DS
Data Sheet December 2001
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
This family of MOS gat.
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