HGTP12N60C3D Datasheet - Fairchild Semiconductor

HGTP12N60C3D, N-Channel IGBT

HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gat.

datasheet Preview Page 1 from Datasheet4u.com

HGTP12N60C3D_FairchildSemiconductor.pdf

HGTP12N60C3D Datasheet Preview — Preview of HGTP12N60C3D PDF

Datasheet Details

Part number:

HGTP12N60C3D

Manufacturer:

Fairchild Semiconductor

File Size:

154.93 KB

Description:

N-Channel IGBT

Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in a

HGTP12N60C3D Distributors

📁 Related Datasheet

HGTP12N60B3 HGTP12N60D1 HGTP10N40C1 HGTP10N40C1D HGTP10N40E1 HGTP10N40E1D

📌 All Tags

HGTP12N60C3D N-Channel IGBT Fairchild Semiconductor

Fairchild Semiconductor HGTP12N60C3D-like datasheet