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HGTP12N60C3

N-Channel IGBT

HGTP12N60C3 Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications

HGTP12N60C3 Datasheet (131.24 KB)

Preview of HGTP12N60C3 PDF

Datasheet Details

Part number:

HGTP12N60C3

Manufacturer:

Fairchild Semiconductor

File Size:

131.24 KB

Description:

N-channel igbt.

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HGTP12N60C3 N-Channel IGBT Fairchild Semiconductor

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