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HGTP12N60C3 Datasheet - Fairchild Semiconductor

HGTP12N60C3 - N-Channel IGBT

HGTP12N60C3 Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications

HGTP12N60C3_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

HGTP12N60C3

Manufacturer:

Fairchild Semiconductor

File Size:

131.24 KB

Description:

N-channel igbt.

HGTP12N60C3 Distributor

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