HGTP12N60C3 Datasheet, Igbt, Fairchild Semiconductor

HGTP12N60C3 Features

• Igbt of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage

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Part number:

HGTP12N60C3

Manufacturer:

Fairchild Semiconductor

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131.24kb

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📄 Datasheet

Description:

N-channel igbt. The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs a

HGTP12N60C3 Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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HGTP12N60C3

Fairchild Semiconductor

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