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HGTP10N40E1 - N-Channel IGBT

Datasheet Summary

Description

The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers.

Features

  • 10A and 12A, 400V and 500V.
  • VCE(ON): 2.5V Max.
  • TFI: 1µs, 0.5µs.
  • Low On-State Voltage.
  • Fast Switching Speeds.
  • High Input Impedance.
  • No Anti-Parallel Diode.

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Datasheet Details

Part number HGTP10N40E1
Manufacturer Intersil Corporation
File Size 38.89 KB
Description N-Channel IGBT
Datasheet download datasheet HGTP10N40E1 Datasheet
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Full PDF Text Transcription

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HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 April 1995 10A, 12A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EMITTER COLLECTOR COLLECTOR (FLANGE) GATE Features • 10A and 12A, 400V and 500V • VCE(ON): 2.5V Max. • TFI: 1µs, 0.
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