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HGTP10N120BN

N-Channel IGBT

HGTP10N120BN Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: A

HGTP10N120BN Datasheet (217.60 KB)

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Datasheet Details

Part number:

HGTP10N120BN

Manufacturer:

Fairchild Semiconductor

File Size:

217.60 KB

Description:

N-channel igbt.
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N12.

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HGTP10N120BN N-Channel IGBT Fairchild Semiconductor

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