Part number:
HGTP10N120BN
Manufacturer:
Fairchild Semiconductor
File Size:
217.60 KB
Description:
N-channel igbt.
HGTP10N120BN Datasheet (217.60 KB)
Datasheet Details
HGTP10N120BN Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: A
HGTP10N120BN Datasheet (217.60 KB)
Datasheet Details
HGTP10N120BN
Fairchild Semiconductor
217.60 KB
N-channel igbt.
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