HGTP10N50E1 Datasheet - Intersil Corporation

N-Channel IGBT

HGTP10N50E1 Features

* 10A and 12A, 400V and 500V

* VCE(ON): 2.5V Max.

* TFI: 1µs, 0.5µs

* Low On-State Voltage

* Fast Switching Speeds

* High Input Impedance

* No Anti-Parallel Diode Applications HGTP-TYPES JEDEC TO-220AB

* Power Supplies

* Motor

HGTP10N50E1 General Description

The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These typ.

HGTP10N50E1 Datasheet (38.89 KB)

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Part number:

HGTP10N50E1

Manufacturer:

Intersil Corporation

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38.89 KB

Description:

N-channel igbt.
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 April 1995 10A, 12A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EM.

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HGTP10N50E1 N-Channel IGBT Intersil Corporation

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HGTP10N50E1 Features

HGTP10N50E1 General Description

Datasheet Details

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