HGTP10N50E1 Datasheet - Intersil Corporation

HGTP10N50E1 - N-Channel IGBT

The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers.

These typ

HGTP10N50E1 Features

* 10A and 12A, 400V and 500V

* VCE(ON): 2.5V Max.

* TFI: 1µs, 0.5µs

* Low On-State Voltage

* Fast Switching Speeds

* High Input Impedance

* No Anti-Parallel Diode Applications HGTP-TYPES JEDEC TO-220AB

* Power Supplies

* Motor

HGTP10N50E1_IntersilCorporation.pdf